A model for crystal growth during metal induced lateral crystallization of amorphous silicon
A model for crystal growth during metal induced lateral crystallization of amorphous silicon
复制标题
非晶硅金属诱导横向结晶过程中晶体生长的模型
DOI：
10.1063/1.1526937
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
K. Saraswat
中科院分区：
文献类型：
--
作者：
A. Joshi;T. Krishnamohan;K. Saraswat
本文提出了一个金属诱导横向晶化非晶硅薄膜(α-Si)晶体生长模型。不同小组以前使用镍进行MILC的工作报告了晶体生长速度随着时间的增加而增加，也随着时间的推移而减少。根据他们的实验结果，我们认为新晶硅中的部分或全部镍来自NiSi2运动前锋，它减薄了它的厚度。在几个假设条件下，得到了晶体生长速率与NiSi2减薄速率之间的关系。对于MILC，提出了扩散限制生长和表面反应限制生长两种机制来解释晶体生长速率的增加和减少。在计算了晶体生长随时间的变化后，将该模型与实验数据进行了比较。
In this work a model has been proposed to predict crystal growth with metal induced lateral crystallization (MILC) of thin films of amorphous silicon (α-Si). Previous work by different groups using nickel for MILC reports crystal growth rate increasing as well as decreasing with time. Based on their experimental results, we propose that part or all of nickel in newly crystallized Si comes from the NiSi2 moving front which reduces its thickness. With a few assumptions, relation between rate of crystal growth and rate of NiSi2 thinning is obtained. Two regimes, diffusion limited growth and surface reaction limited growth are proposed for MILC to explain increasing and decreasing crystal growth rates. After calculating crystal growth as a function of time, the proposed model is compared with experimental data.