Carrier thermodynamics in InAs/InxGa1-xAs quantum dots
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots
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DOI：
10.1103/physrevb.74.205302
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发表时间：
2006-11-01
影响因子：
3.7
通讯作者：
Franchi, S.
中科院分区：
文献类型：
--
作者：
Sanguinetti, S.;Colombo, D.;Franchi, S.
我们提出了一个详细的研究在InAs/InxGa 1-xAs自组装量子点的载流子热力学进行通过精确测定的量子点的光致发光效率的依赖于温度，激发功率密度和波长。我们已经发现实验证据表明，在点的电子和空穴的人口是高度相关的。我们还表明，其他令人困惑的效果，如量子点集成的光致发光强度的激发功率密度的超线性依赖的发病，干从饱和，由光生载流子，在势垒的非辐射中心。
We present a detailed study of the carrier thermodynamics in InAs/InxGa1-xAs self-assembled quantum dots performed via an accurate determination of the dependence of the quantum dot photoluminescence efficiency on temperature, excitation power density and wavelength. We have found experimental evidences that the electron and hole populations in the dots are highly correlated. We also show that other puzzling effects, like the onset of the superlinear dependence of the quantum dot integrated photoluminescence intensity on the excitation power density, stem from the saturation, by the photogenerated carriers, of nonradiative centers in barrier.