EBIC investigations of dislocations and their interactions with impurities in silicon
EBIC investigations of dislocations and their interactions with impurities in silicon
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DOI：
10.1002/pssa.2211380241
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发表时间：
1993-08
期刊：
影响因子：
--
通讯作者：
T. S. Fell;P. Wilshaw;M. D. Coteau
中科院分区：
文献类型：
--
作者：
T. S. Fell;P. Wilshaw;M. D. Coteau
讨论了 EBIC 技术在研究位错和其他扩展缺陷中杂质吸附的适用性，包括当遵循 Wilshaw 复合模型时如何确定能级位置和所得电子态浓度的定量值。提出了在 900°C 变形的“干净”位错的新实验结果以及位错处存在状态带的证据。此外，镍装饰位错的 EBIC 测量显示了可以用 Wilshaw 复合模型和另一种机制的混合来描述的复合行为。最后，发现了一种称为“电子束诱导活动”的新效应，即电子束增加了观察到的电活动。
The applicability of the EBIC technique for studying the gettering of impurities to dislocations and other extended defects is discussed, including how quantitative values for the energy level position and concentration of the resulting electronic states can be determined when the Wilshaw model of recombination is obeyed. New experimental results from “clean” dislocations deformed at 900°C are presented along with evidence of the existence of a band of states at dislocations. In addition, EBIC measurements of nickel decorated dislocations show recombination behaviour that may be described in terms of a mixture of Wilshaw's recombination model and another type of mechanism. Finally, a new effect termed “electron beam induced activity” has been discovered, whereby the electron beam increases the electrical activity observed.