Electronic Properties of BaFe2As2 upon Doping and Pressure: The Prominent Role of the As p Orbitals
Electronic Properties of BaFe2As2 upon Doping and Pressure: The Prominent Role of the As p Orbitals
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DOI：
10.1103/physrevlett.114.177001
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发表时间：
2015-04-30
影响因子：
8.6
通讯作者：
Rueff, J. -P.
中科院分区：
文献类型：
--
作者：
Baledent, V.;Rullier-Albenque, F.;Rueff, J. -P.
利用高分辨率、去掉寿命的As-K边X射线吸收谱，我们证明了As电子结构在室温下对电子掺杂Co或BaFe2As2的压力变化具有很强的敏感性。我们的结果揭示了As-4P轨道在铁磷酸盐超导体的电子性质中所起的重要作用。我们提出了一个独特的图像来描述外部参数掺杂和压力的整体效应，解决了角分辨光电子能谱、输运和吸收结果之间的明显矛盾，其中As-p态是关键因素。
Using high-resolution, lifetime removed, x-ray absorption spectroscopy at the As K edge, we evidence the strong sensitivity of the As electronic structure upon electron doping with Co or pressure change in BaFe2As2, at room temperature. Our results unravel the prominent role played by As-4p orbitals in the electronic properties of the Fe pnictide superconductors. We propose a unique picture to describe the overall effect of both external parameter doping and pressure, resolving the apparent contradiction between angle-resolved photoemission spectroscopy, transport, and absorption results, with the As-p states as a key ingredient.