Industrially scalable and cost-effective Mn2+ doped ZnxCd1−xS/ZnS nanocrystals with 70% photoluminescence quantum yield, as efficient down-shifting materials in photovoltaics
Industrially scalable and cost-effective Mn2+ doped ZnxCd1−xS/ZnS nanocrystals with 70% photoluminescence quantum yield, as efficient down-shifting materials in photovoltaics
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DOI：
10.1039/c5ee03165f
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发表时间：
2016-03
影响因子：
32.5
通讯作者：
Ievgen Levchuk;C. Würth;F. Krause;A. Osvet;M. Batentschuk;U. Resch‐Genger;C. Kolbeck;P. Herre
中科院分区：
文献类型：
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作者：
Ievgen Levchuk;C. Würth;F. Krause;A. Osvet;M. Batentschuk;U. Resch‐Genger;C. Kolbeck;P. Herre
我们提出了通过简单的非注射一锅两步合成路线合成的胶体稳定且高发光的 ZnxCd1−xS:Mn/ZnS 核壳纳米晶体 (NC)，该合成路线可以轻松放大。反应组分、参数和 ZnS 壳厚度的系统变化产生了具有 70% 极高光致发光量子产率 (Φpl) 的掺杂纳米晶体，这是迄今为止报道的这些锰掺杂硫化物半导体 NC 的最高值。这些材料可以使用相应优化的反应条件以高再现性大量合成相同的高质量，即相同的Φpl。这些零重吸收高质量NC在光转换层中的应用，沉积在商业单晶硅（mono-Si）太阳能电池的顶部，导致该设备在300至400 nm之间的紫外光谱区域的外量子效率（EQE）显着提高，最高可达约100 nm。 12%。 EQE 的增强体现在功率转换效率 (PCE) 提高近 0.5 个百分点，接近该硅太阳能电池降档预期的理论极限 (0.6%)。由此产生的 PCE 可能会导致应用程序的 BoM（物料清单）成本降低。单晶光伏组件3%。这种微小但明显的改进预计将为掺杂半导体NC作为硅光伏（PV）和其他光电应用的具有成本效益的光转换器的工业应用铺平道路。
We present colloidally stable and highly luminescent ZnxCd1−xS:Mn/ZnS core–shell nanocrystals (NCs) synthesized via a simple non-injection one-pot, two-step synthetic route, which can be easily upscaled. A systematic variation of the reaction component, parameters and thickness of the ZnS shell yielded doped nanocrystals with a very high photoluminescence quantum yield (Φpl) of 70%, which is the highest value yet reported for these Mn-doped sulfide-semiconductor NCs. These materials can be synthesized with high reproducibility in large quantities of the same high quality, i.e., the same Φpl using accordingly optimized reaction conditions. The application of these zero-reabsorption high quality NCs in the light conversion layers, deposited on top of a commercial monocrystalline silicon (mono-Si) solar cell, led to a significant enhancement of the external quantum efficiency (EQE) of this device in the ultraviolet spectral region between 300 and 400 nm up to ca. 12%. EQE enhancement is reflected by an increase in the power conversion efficiency (PCE) by nearly 0.5 percentage points and approached the theoretical limit (0.6%) expected from down-shifting for this Si solar cell. The resulting PCE may result in a BoM (bill of materials) cost reduction of app. 3% for mono-Si photovoltaic modules. Such small but distinct improvements are expected to pave the road for an industrial application of doped semiconductor NCs as cost-effective light converters for silicon photovoltaic (PV) and other optoelectronic applications.