A wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
A wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
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DOI:
10.1109/jssc.2005.858477
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发表时间:
2005-12-01
影响因子:
5.4
通讯作者:
Furuta, M
中科院分区:
文献类型:
--
作者:
Mase, M;Kawahito, S;Furuta, M
A wide dynamic range CMOS image sensor with a burst readout multiple exposure method is proposed. In this method, maximally four different exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-mu m 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.