Temperature dependence of terahertz radiation from n-type InSb and n-type InAs surfaces
Temperature dependence of terahertz radiation from n-type InSb and n-type InAs surfaces
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n 型 InSb 和 n 型 InAs 表面太赫兹辐射的温度依赖性
DOI：
10.1007/s003400000455
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
K. Sakai
中科院分区：
文献类型：
--
作者：
S. Kono;P. Gu;M. Tani;K. Sakai
研究了近红外激光脉冲辐照n型（111）InSb和n型（111）InAs表面产生的太赫兹辐射的方位角和温度特性。方位角的依赖性表明，差频混合（DFM）的贡献是不占主导地位的两种材料在激发密度为1.01 GW/cm 2。在适当的方位角下，由于DFM的辐射被排除在总的太赫兹辐射和太赫兹辐射由于浪涌电流的温度依赖性进行了观察。太赫兹辐射的增加与温度的降低被发现是更明显的InSb比InAs。不同的温度依赖性可以归因于两种材料的不同辐射机制。特别地，光致伸缩效应很好地解释了InSb的THz辐射的温度依赖性。
The azimuthal angle dependence and the temperature dependence of terahertz (THz) radiation generated fromn-type (111) InSb andn-type (111) InAs surfaces irradiated with ∼80 fs near-infrared laser pulses are investigated. The azimuthal angle dependence shows that the contribution of the difference-frequency mixing (DFM) is not dominant for both materials at the excitation density of ∼1 GW/cm2. At an appropriate azimuthal angle, the radiation due to DFM is excluded from the total THz radiation and the temperature dependence of THz radiation due to the surge current is observed. The increase of THz radiation with decrease of the temperature is found to be much more pronounced for InSb than for InAs. The different temperature dependence can be attributed to the different radiation mechanisms dominant for both materials. Especially, the temperature dependence of the THz radiation from InSb is well explained by the photo-Dember effect.