NOx Sensing Characteristics of Semiconductor Gas Sensors under Controlled Oxygen Activity Conditions Using a Proton-Conducting Electrolyte
NOx Sensing Characteristics of Semiconductor Gas Sensors under Controlled Oxygen Activity Conditions Using a Proton-Conducting Electrolyte
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DOI:
10.1149/2.0361709jes
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发表时间:
2017
影响因子:
3.9
通讯作者:
M. Nagao;Kazuyo Kobayashi;P. Lv;S. Teranishi;T. Hibino
中科院分区:
文献类型:
--
作者:
M. Nagao;Kazuyo Kobayashi;P. Lv;S. Teranishi;T. Hibino
The formation of highly oxidative and reductive states within and around WO 3 and In 2 O 3 during detection of NO x (NO and NO 2) was investigated by attaching the metal oxide electrode to a proton-conducting Sn 0.9 In 0.1 P 2 O 7 electrolyte, followed by electrode polarization at 200 C. Proton insertion and release occurred at the WO 3 electrode, while metal-ion redox reactions proceeded at the In 2 O 3 electrode. Although the hydrogen tungsten bronze formed under cathodic polarization was insensitive to NO and NO 2, the WO 3 operating under anodic polarization possessed sensitivity toward NO and NO 2. Addition of these gases increased the ohmic, charge-transfer, and gas-diffusion resistances in a similar manner. The In 2 O 3 underwent significant changes in NO x sensing ability upon changes in polarity and magnitude of the applied voltage. In particular, under cathodic polarization, the sensor resistance decreased upon addition of NO and NO 2 in the range of–0.5 to–1.5 V, but increased upon addition at–2.0 V, due to reduction of In 3+ to lower valence states, which selectively absorbed NO 2 beginning at–1.7 V. The WO 3 and In 2 O 3 sensing abilities were not significantly affected by interference from O 2, H 2, CO, or nC 4 H 10, and the sensors became more sensitive toward NO 2 as the WO 3 and In 2 O 3 particle size decreased.