Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
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DOI：
10.1002/adma.201605092
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发表时间：
2017-03-28
影响因子：
29.4
通讯作者：
Aharonovich, Igor
中科院分区：
文献类型：
--
作者：
Berhane, Amanuel M.;Jeong, Kwang-Yong;Aharonovich, Igor
报道了氮化镓（GaN）中的室温量子发射器。这些发射器源于六方晶格中的立方夹杂物，并在红色光谱范围内呈现窄带发光。这些光源在不同的氮化镓衬底中被发现，因此对于可扩展的量子技术很有前景。
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are pro-mising for scalable quantum technologies.