175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes
175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes
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DOI：
10.1063/1.2420793
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发表时间：
2006-12-18
影响因子：
4
通讯作者：
Inomata, K.
中科院分区：
文献类型：
--
作者：
Tezuka, N.;Ikeda, N.;Inomata, K.
采用L_2（1）-Co_2FeAl_（0.5）Si_（0.5）全Heusler合金作为上、下电极和MgO阻挡层，制备了外延生长的自旋阀型磁性隧道结。对于MgO厚度t（MgO）=1.5 nm，隧道磁阻（TMR）比和电阻与面积乘积（RA）最初增加到约350 ℃，然后通过退火降低，而对于t（MgO）=2.0和2.5 nm，TMR比随着退火温度增加并在约500 ℃达到峰值。当t（MgO）=2.0 nm时，室温下的TMR率高达175%，热稳定性高达500 ℃，表明具有L2（1）结构的Co2 FeAl 0.5Si 0.5具有大的隧穿自旋极化和高的热稳定性。(c)2006年，美国物理学会。
The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L2(1)-Co2FeAl0.5Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness t(MgO)=1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 degrees C and then decrease by annealing, while for t(MgO)=2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 degrees C. The TMR ratio up to 175% at RT and thermal stability up to 500 degrees C have been achieved for t(MgO)=2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2FeAl0.5Si0.5 with L2(1) structure. (c) 2006 American Institute of Physics.