AN XPS STUDY OF GAN THIN-FILMS ON GAAS
AN XPS STUDY OF GAN THIN-FILMS ON GAAS
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DOI：
10.1002/sia.740160116
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发表时间：
1990-07-01
影响因子：
1.7
通讯作者：
WERCKMANN, J
中科院分区：
文献类型：
--
作者：
CARIN, R;DEVILLE, JP;WERCKMANN, J
推导了反应溅射GaN薄膜中镓和氮的光电子能量和俄歇谱线能量。从以前的RBS调查，发现这是化学计量的散装。薄膜的XPS表面分析给出了氧化镓的化学含量为20%。然后通过Ar+（2 keV）溅射蚀刻进行GaN/GaAs样品的深度剖析。Ga L3 M4，5 M4，5俄歇线显示了通过氮的优先溅射和金属镓的产生而导致的GaN的部分解离。具有不同逸出深度的Ga 3d和Ga 2 p光电子线给出了相同的结果。蚀刻速率高：GaN溅射产率，这是几乎相同的Ga，被发现是10.8。氧化镓成分消失的深度大于10 nm：它的结论是，表面氧化镓可能是由于部分氧化的GaN薄膜在大气中的空气。
The energies of photoelectron and Auger lines of gallium and nitrogen in GaN thin films obtained by reactive sputtering are derived. From previous RBS investigations, such were found to be stoichiometric in the bulk. The XPS surface analysis of the films gives a chemical content of ∼20% gallium oxide. Depth profiling of GaN/GaAs samples is then performed by Ar+(2 keV) sputter‐etching. The Ga L3M4,5M4,5Auger line shows a partial dissociation of GaN by preferential sputtering of nitrogen and the production of metallic gallium. The Ga 3d and Ga 2p photoelectron lines, having different escape depths, give the same result. The etching rate is high: the GaN sputtering yield, which is almost the same as that for Ga, is found to be ∼8. The gallium oxide component disappears for depths larger than 10 nm: it is concluded that the surface gallium oxide is probably due to the partial oxidation of GaN films in atomospheric air.