Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
复制标题
4H-SiC 上热氧化物的时间依赖性介电击穿
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
R. Beaupre
中科院分区：
文献类型：
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作者：
K. Matocha;R. Beaupre
在电场为6~10 mV/cm的条件下，用含时介电击穿技术研究了4H-SiC上的热氧化物。在250°C下，使用N2O热生长的氧化物在6 mV/cm的温度下，未经热处理的平均失效时间(MTTF)为2300小时。在水蒸气中生长的氧化物没有经过任何退火热处理，其MTTf大约是N2O生长的氧化物的四倍。在电场大于8 mV/cm的情况下，Fowler-Nordheim隧道显著减少了预期故障时间。为此，必须通过在较低电场下测量的数据点来外推在低场下的平均失效时间。
Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm. At 250°C, oxides thermally-grown using N2O with NO annealing achieve a mean time to failure (MTTF) of 2300 hours at 6 MV/cm. Oxides grown in steam with NO annealing show approximately four times longer MTTF than N2O-grown oxides. At electric fields greater than 8 MV/cm, Fowler-Nordheim tunneling significantly reduces the expected failure times. For this reason, extrapolation of mean-time to failure at low fields must be performed by datapoints measured at lower electric fields.