Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
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DOI：
10.1063/1.4820839
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发表时间：
2013-09-09
影响因子：
4
通讯作者：
Speck, J. S.
中科院分区：
文献类型：
--
作者：
Marcinkevicius, S.;Kelchner, K. M.;Speck, J. S.
用时间分辨光致发光方法研究了10 nm宽m面同质外延In 0.15Ga 0.85N/GaN量子威尔斯中载流子的复合.在3.5 K时的辐射复合时间很短，约为0.5 ns。该值和单指数发光衰减表明局域激子复合不受面内电场的影响。在室温下，非辐射复合占主导地位。数据表明，非辐射复合通过有效的复合中心进行。Ga空位与氧和/或相关的界面缺陷的复合物被建议发挥这种作用，从而为未来材料质量的改进提供了方向。(C)2013 AIP Publishing LLC.
Carrier recombination in single 10 nm wide m-plane homoepitaxial In0.15Ga0.85N/GaN quantum wells was examined by time-resolved photoluminescence. The radiative recombination time at 3.5 K was found to be short, about 0.5 ns. This value and the single-exponential luminescence decay show that the localized exciton recombination is not affected by the in-plane electric field. At room temperature, the nonradiative recombination was prevalent. The data indicate that the nonradiative recombination proceeds via efficient recombination centers. Complexes of Ga vacancies with oxygen and/or related interface defects are suggested to play this role and thus provide a direction for future improvements in materials' quality. (C) 2013 AIP Publishing LLC.