Core-level shifts at B- and Al-doped 6H-SiC studied by XPS
Core-level shifts at B- and Al-doped 6H-SiC studied by XPS
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DOI：
10.1002/(sici)1096-9918(199903)27:3
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发表时间：
1999-03
影响因子：
1.7
通讯作者：
S. Oswald;H. Wirth
中科院分区：
文献类型：
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作者：
S. Oswald;H. Wirth
碳化硅（SiC）是一种新型电子材料，本文研究了掺杂元素（B，Al）的结合状态。溅射引起的非晶化和表面态效应影响XPS测量的芯能级能量。对于掺杂元素注入和退火后的一系列测量的比较，使用的SiC体状态的能量确定在断裂的SiC样品作为结合能参考。从测量的结合能的变化和估计与电负性差异的简单模型，它被发现，注入后的B和Al已经倾向于键合碳，而不是Si。版权所有© 1999年约翰威利父子有限公司。
Silicon carbide (SiC) as an interesting material for new electronic applications was studied with respect to the binding states of doping elements (B, Al). Amorphization due to sputtering and the effect of surface states influence the core-level energies measured by XPS. For the comparison of a series of measurements after doping element implantation and annealing, the use of the SiC bulk-state energies determined at a fractured SiC sample as a binding energy reference is proposed. From the measured binding energy shifts and estimations with the simple model of electronegativity differences, it is found that B and Al after implantation already prefer bondings to carbon and not to Si. Copyright © 1999 John Wiley & Sons, Ltd.