Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier
Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier
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DOI：
10.1103/physrevb.80.125313
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发表时间：
2009-09
影响因子：
3.7
通讯作者：
K. Masuko;A. Ashida;T. Yoshimura;N. Fujimura
中科院分区：
文献类型：
--
作者：
K. Masuko;A. Ashida;T. Yoshimura;N. Fujimura
本文报道了磁势垒层下面的ZnO导电层中出现的正磁阻效应的起源。首先，采用脉冲激光沉积法在ZnO单晶衬底上制备了型调制掺杂的异质结。两种异质结的MR特性具有不同的低温电子迁移率，对应于由Mn离子在沉积过程中的相互混合或相互扩散产生的界面加宽的幅度，进行了评估，以调查在异质界面处发生的自旋相关的输运现象的机制。高掺杂的异质结表现出类似布里渊效应的磁电阻行为，而低掺杂的异质结表现出典型的二维稀磁半导体（2D DMS）磁电阻行为，这是由于ZnO导电层中存在Mn离子。另一方面，对于高的异质结，由于界面展宽的抑制，2D DMS MR从MR中被消除，并且通过上下自旋载流子的波函数穿透势垒层的几率的差异，导致ZnO沟道中子带的自旋分裂.
We report the origin of the positive magnetoresistance (MR) occurring in the ZnO conduction layer underneath of themagnetic barrier layer. First,-typemodulation-doped heterostructures were fabricated on ZnOsingle-crystal substrates using pulsed laser deposition. The MR characteristics of two heterostructures with different low-temperature electron mobility, corresponding to the magnitude of interface broadening generated by intermixing or interdiffusion of Mn ions during deposition, were evaluated to investigate the mechanism of spin-related transport phenomena occurring at the heterointerface. Theheterostructure with highshows the Brillouin-function-like MR behavior, while that with lowshows typical two-dimensional diluted magnetic semiconductor (2D DMS) MR behavior originating from the existence of Mn ions in the ZnO conduction layer. On the other hand, for a heterostructure with high, 2D DMS MR is eliminated from the MR due to suppress the interface broadening, and the spin splitting of the subband in ZnO channel is induced through the difference of the penetration probability of wave function of up-spin carriers and down-spin carriers into thebarrier layer.