Formation of CH3NH2-incorporated intermediate state in CH3NH3PbI3 hybrid perovskite thin film formed by sequential vacuum evaporation
Formation of CH3NH2-incorporated intermediate state in CH3NH3PbI3 hybrid perovskite thin film formed by sequential vacuum evaporation
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DOI：
10.7567/1882-0786/aaf0ac
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发表时间：
2019-01-01
影响因子：
2.3
通讯作者：
Nakamura, Masakazu
中科院分区：
文献类型：
--
作者：
Jung, Min-Cherl;Kobori, Sora;Nakamura, Masakazu
采用顺序真空蒸发法（SVE），以PbI 2第一层的不同沉积速率制备了CH 3 NH3 PbI 3薄膜，以了解其形成行为。在1和3 A s（-1）的低PbI 2沉积速率下，薄膜没有形成混合钙钛矿结构。在6 A s（-1）的沉积速率，观察到的钙钛矿结构与剩余的PbI 2和中间相在一起。在10 A s（-1）范围内，中间相增多，出现CH_3NH_2分子缺陷。SVE形成的混合钙钛矿薄膜具有微小的晶粒和CH 3 NH 2掺入的中间态。(C)2018日本应用物理学会
CH3NH3PbI3 thin films were formed with various deposition rates of PbI2 first layer using a sequential vacuum evaporation method (SVE) to understand the formation behavior. Under low PbI2 deposition rates with 1 and 3 A s(-1), the thin films did not form the hybrid perovskite structure. Over the 6 A s(-1) deposition rate, the perovskite structure is observed with the remaining PbI2 and an intermediate phase together. In the 10 A s(-1), the intermediate phase is increased, and the CH3NH2 molecular defect is observed. The hybrid perovskite thin film formed by SVE is confirmed with tiny grains and CH3NH2-incorporated intermediate state. (C) 2018 The Japan Society of Applied Physics