Magnetostrain and Magnetization of the Ni 50 Mn 27.5 Ga 22.5 Single Crystal
Magnetostrain and Magnetization of the Ni 50 Mn 27.5 Ga 22.5 Single Crystal
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DOI：
10.1088/0256-307x/23/5/063
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发表时间：
2006-05
影响因子：
3.5
通讯作者：
Wang Jingmin;Wang Yufei;Jiang Chengbao;Xu Huibin
中科院分区：
文献类型：
--
作者：
Wang Jingmin;Wang Yufei;Jiang Chengbao;Xu Huibin
在室温下，具有5M马氏体结构的Ni50Mn27.5Ga22.5单晶获得了高达6.2%的巨磁感生应变。对于磁应变，开关磁场约为2.4 kOe。沿初始硬方向施加的切换场中的“磁化跳跃”效应证实了大磁应变的发生。在较低温度范围内，研究了磁应变与温度的关系。磁应变随温度的升高呈线性下降，但在马氏体逆相变温度附近有较大幅度的下降。
Giant magnetic field induced strain (MFIS) up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5 M martensitic structure at room temperature. The switching magnetic field was about 2.4 kOe for the magnetostrain. A `magnetization jump' effect in the switching field applied along the initially hard direction confirms the occurrence of the large magnetostrain. The temperature dependence of the magnetostrain is investigated in lower temperature range. A linear decrease of the magnetostrain is observed with increasing temperature, but a strong decrease is monitored near the reverse martensitic transformation temperature.