Nanowire Thin-Film Transistors: A New Avenue to High-Performance Macroelectronics
Nanowire Thin-Film Transistors: A New Avenue to High-Performance Macroelectronics
复制标题
DOI：
10.1109/ted.2008.2005182
复制
发表时间：
2008-11-01
影响因子：
3.1
通讯作者：
Duan, Xiangfeng
中科院分区：
文献类型：
--
作者：
Duan, Xiangfeng
回顾了最近在利用半导体纳米线（NW）实现高性能宏观电子学方面所做的努力。简而言之，从取向半导体纳米线薄膜出发，提出并论证了纳米线薄膜晶体管（NW-TFT）的新概念。在NW-TFT中，源极和漏极由多个并联的单晶NW桥接。因此，电荷在单晶内从源极移动到漏极，确保高载流子迁移率。最近的研究表明，可以使用溶液组装工艺，在各种基板（包括玻璃和塑料）上使用硅纳米线生产高性能纳米线TFT和高频电路。这些NW-TFT的器件性能不仅大大超过了溶液加工的有机TFT，而且也明显优于传统的非晶或多晶硅TFT，接近单晶硅基器件。此外，通过类似的框架，具有高本征载流子迁移率或光学功能的III-V族或II-VI族纳米带或纳米带材料可以组装成柔性基板上的薄膜，以实现传统宏观电子学不可能实现的新型多功能电子/光电子学。因此，这种方法为高性能柔性宏电子学开辟了一条新途径，不仅会影响现有应用，而且还将实现用于计算、存储和无线通信的全新一代柔性、可穿戴或一次性电子产品。
The recent efforts in exploiting semiconductor nanowires (NWs) for high-performance macroelectronics are reviewed. In brief, a new concept of NW thin-film transistors (NW-TFTs) has been proposed and demonstrated from oriented semiconductor NW thin films. In NW-TFTs, the source and drain electrodes are bridged by multiple single-crystal NWs in parallel. Therefore, charges travel from source to drain within single crystals, ensuring high carrier mobility. Recent studies have shown that high-performance NW-TFTs and high-frequency circuits can be produced from silicon NWs on a variety of substrates, including glass and plastics, using a solution assembly process. The device performance of these NW-TFTs not only greatly surpasses that of solution-processed organic TFTs but is also significantly better than that of conventional amorphous or polycrystalline silicon TFTs, approaching single-crystal silicon-based devices. Furthermore, with a similar framework, group III-V or II-VI NW or nanoribbon materials of high intrinsic carrier mobility or optical functionality can be assembled into thin films on flexible substrates to enable new multifunctional electronics/optoelectronics that are not possible with traditional macroelectronics. This approach thus opens a new avenue to high-performance flexible macroelectronics and will not only impact existing applications but also enable a whole new generation of flexible, wearable, or disposable electronics for computing, storage, and wireless communication.