Fabrication and characterization of freestanding circular GaN gratings.
Fabrication and characterization of freestanding circular GaN gratings.
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DOI：
10.1364/oe.18.000773
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发表时间：
2010-01
期刊：
影响因子：
3.8
通讯作者：
Yongjin Wang;F. Hu;H. Sameshima;K. Hane
中科院分区：
文献类型：
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作者：
Yongjin Wang;F. Hu;H. Sameshima;K. Hane
将独立式纳米结构与活性氮化镓(GaN)材料相结合是表面发射光电子应用的重要研究方向。利用硅的体微机械加工，我们展示了一种利用硅基GaN系统制备独立GaN纳米结构的很有前途的方法。利用快原子束(FAB)刻蚀技术实现了结构清晰的纳米级环形GaN光栅，采用深反应离子刻蚀(DRIE)技术去除了硅衬底，得到了独立的GaN光栅。通过FAB刻蚀从背面减薄独立GaN板，以减少GaN板内部的受限模式。实验测得的微光致发光(MICRO-PL)光谱表明，引入独立式圆形光栅后，峰值强度和积分强度都有显著的提高。这项工作代表了将GaN基活性材料与独立的纳米结构相结合以进一步提高光提取效率的重要一步。
It's of significant interest to combine freestanding nanostructure with active gallium nitride (GaN) material for surface-emitting optoelectronic application. By utilizing bulk micromachining of silicon, we demonstrate here a promising way to fabricate freestanding GaN nanostructures using a GaN-on-silicon system. The well-defined nanoscale circular GaN gratings are realized by fast-atom beam (FAB) etching, and the freestanding GaN gratings are obtained by removing silicon substrate using deep reactive ion etching (DRIE). The freestanding GaN slab is thinned from the backside by FAB etching to reduce the confined modes inside the GaN slab. The measured microphotoluminescence (micro-PL) spectra experimentally demonstrate significant enhancements in peak intensity and integrated intensity by introducing freestanding circular grating. This work represents an important step in combining GaN-based active material with freestanding nanostructures for further increasing light-extraction efficiency.