Tungsten-Based SOI Microhotplates for Smart Gas Sensors
Tungsten-Based SOI Microhotplates for Smart Gas Sensors
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DOI：
10.1109/jmems.2008.2007228
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发表时间：
2008-12-01
影响因子：
2.7
通讯作者：
Gardner, Julian W.
中科院分区：
文献类型：
--
作者：
Ali, Syed Z.;Udrea, Florin;Gardner, Julian W.
本文主要研究了一种采用钨电阻加热器的新型高温绝缘体上硅（SOI）微热板的设计、制作和表征。钨具有较高的工作温度和良好的机械强度，在高温SOI-CMOS工艺中用作互连。这些器件采用商业SOI-CMOS工艺制造，然后进行深反应离子蚀刻（DRIE）回蚀刻步骤，提供低成本和电路集成。在本文中，我们报告的微型加热板的设计与不同的直径（560和300 μ m）连同3-D的ANSYS模拟，热特性，和分析分析。结果表明，这些器件可以在高温下工作（600摄氏度）远超高温SOI IC的典型结温（225摄氏度），具有超低的做功耗（600 ℃时为12 mW），快速瞬态时间（到600摄氏度的上升时间低至2 ms）、良好的热稳定性，以及更重要的是，在晶片内和从晶片到晶片的高再现性。我们还报告了对钨加热器长期稳定性的初步测试。我们相信，这种类型的SOI微热板可以在商业上利用完全集成的微量热或电阻式气体传感器。
This paper is concerned with the design, fabrication, and characterization of novel high-temperature silicon on insulator (SOI) microhotplates employing tungsten resistive heaters. Tungsten has a high operating temperature and good mechanical strength and is used as an interconnect in high temperature SOI-CMOS processes. These devices have been fabricated using a commercial SOI-CMOS process followed by a deep reactive ion etching (DRIE) back-etch step, offering low cost and circuit integration. In this paper, we report on the design of microhotplates with different diameters (560 and 300 mu m) together with 3-D electrothermal simulation in ANSYS, electrothermal characterization, and analytical analysis. Results show that these devices can operate at high temperatures (600 degrees C) well beyond the typical junction temperatures of high temperature SOI ICs (225 degrees C), have ultralow do power consumption (12 mW at 600 degrees C), fast transient time (as low as 2-ms rise time to 600 degrees C), good thermal stability, and, more importantly, a high reproducibility both within a wafer and from wafer to wafer. We also report initial tests on the long-term stability of the tungsten heaters. We believe that this type of SOI microhotplate could be exploited commercially in fully integrated microcalorimetric or resistive gas sensors.