Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys
Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys
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DOI：
10.1088/1674-4926/35/9/093001
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发表时间：
2014
影响因子：
5.1
通讯作者：
W. Li 李;Peng 鹏 Jin 金;W. Wang 王;D. Mao 毛;G. Liu 刘;Z. Wang 王;J. Wang 王;F. Xu 许;Bo 波 Shen 沈
中科院分区：
文献类型：
--
作者：
W. Li 李;Peng 鹏 Jin 金;W. Wang 王;D. Mao 毛;G. Liu 刘;Z. Wang 王;J. Wang 王;F. Xu 许;Bo 波 Shen 沈
InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our In0.153Al0.847N sample.
