A 2-20 GHz SiGe HBT single-stage cascode LNA with linearity enhancement
A 2-20 GHz SiGe HBT single-stage cascode LNA with linearity enhancement
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具有线性增强功能的 2-20 GHz SiGe HBT 单级共源共栅 LNA
DOI：
10.1016/j.mejo.2019.03.001
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发表时间：
2019-04-01
影响因子：
2.2
通讯作者：
Zhuang, Yiqi
中科院分区：
文献类型：
--
作者：
Li, Zhenrong;Liu, Shuang;Zhuang, Yiqi
本文提出了一种宽带高增益低噪声放大器（LNA）。为了抑制大信号在高增益条件下的增益压缩，采用了单级共源共栅拓扑结构，采用了电阻并联反馈和发射极简并电阻。因此，宽带输入匹配与前面的L型无源网络一起实现。在共源共栅结构和负载之间插入无源网络，提高了增益带宽和阻抗匹配。该LNA采用0.18 μ mSiGeHBTBiCMOS工艺，后仿真结果表明，该LNA的带宽为2-20 GHz，功率增益为16.1- 18.1dB，噪声系数为2.5- 3.7dB。在14 GHz以上，输入1dB压缩点为-12dBm，3.3V电源下功耗为55 mW。芯片尺寸为0.435 mm（2），无焊盘。
A wideband high-gain low-noise amplifier (LNA) with improved linearity is presented in this paper. To suppress the gain compression of large signal under high gain conditions, the single-stage cascode topology using resistive shunt-shunt feedback and an emmiter degenerate resistor are adopted. Wideband input matching is thus realized in conjunction with the preceding L-type passive network. A passive network inserted between the cascode structure and load enhances the gain bandwidth as well as the impedance matching. The LNA is based on a 0.18 mu m SiGe HBT BiCMOS process and the post simulation results show that the LNA features 2-20 GHz band-width, 16.1-18.1 dB power gain and 2.5-3.7 dB noise figure (NF). It exhibits input 1-dB compression point of -12dBm above 14 GHz and consumes 55 mW power form a 3.3-V supply. The chip size is 0.435 mm(2) without pads.