Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
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DOI：
10.7567/jjap.57.02cb15
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发表时间：
2018-01
影响因子：
1.5
通讯作者：
H. Matsuoka;Kaito Kanahashi;N. Tanaka;Yoshiaki Shoji;Lain‐Jong Li;J. Pu;Hiroshi Ito;H. Ohta;T. Fukushima;T. Takenobu
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文献类型：
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作者：
H. Matsuoka;Kaito Kanahashi;N. Tanaka;Yoshiaki Shoji;Lain‐Jong Li;J. Pu;Hiroshi Ito;H. Ohta;T. Fukushima;T. Takenobu
空穴载流子掺杂到单晶过渡金属二卤化物(TMDC)薄膜中可以用各种化学试剂来实现。然而，用化学气相沉积(CVD)法生长的大面积多晶TMDC单分子膜还没有进行化学掺杂。在这里，我们报道了化学稳定的四(五氟苯基)硼酸盐阴离子[(C6F5)4B]−与两配位阳离子Mes2B+(MES：2，4，6-三甲基苯基)形成的盐可以作为一种有效的空穴掺杂剂用于化学气相沉积生长的二硒化钨(WSe2)薄膜。掺杂后，大面积多晶WSe_2单层薄膜的方阻从90GΩ/sq降至3.2kΩ/sq。
Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.