Resistance switching at the nanometre scale in amorphous carbon
Resistance switching at the nanometre scale in amorphous carbon
复制标题
DOI：
10.1088/1367-2630/13/1/013020
复制
发表时间：
2011
影响因子：
3.3
通讯作者：
A. Sebastian;A. Pauza;C. Rossel;R. Shelby;Arantxa Fraile Rodríguez;H. Pozidis;E. Eleftheriou
中科院分区：
文献类型：
--
作者：
A. Sebastian;A. Pauza;C. Rossel;R. Shelby;Arantxa Fraile Rodríguez;H. Pozidis;E. Eleftheriou
在纳米尺度上研究了非晶态碳(a-C)的电输运和电阻转换机制。非孤立陷阱的Poole-Frenkel输运模型很好地描述了a-C薄膜的电导。此外，在高电场下，观察到了场致阈值转换现象。随后的电阻变化归因于焦耳加热和随后的局域热退火。我们证明，这种机制主要是由于SP3矩阵中现有的sp2位点的聚集。其导电行为、场致开关和焦耳加热引起的原子有序重排引起的电阻变化都使人联想到传统的相变存储材料。这表明a-C作为一种类似的非易失性存储候选材料的潜力。
The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole–Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attributed to Joule heating and subsequent localized thermal annealing. We demonstrate that the mechanism is mostly due to clustering of the existing sp2 sites within the sp3 matrix. The electrical conduction behaviour, field-induced switching and Joule-heating-induced rearrangement of atomic order resulting in a resistance change are all reminiscent of conventional phase-change memory materials. This suggests the potential of a-C as a similar nonvolatile memory candidate material.