Highly sensitive X-ray detector based on a β-Ga2O3:Fe single crystal.
Highly sensitive X-ray detector based on a β-Ga2O3:Fe single crystal.
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DOI：
10.1364/oe.435366
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发表时间：
2021-07
期刊：
影响因子：
3.8
通讯作者：
Jiawen Chen;Huili Tang;Zhiwei Li;Zhichao Zhu;M. Gu;Jun-long Xu;X. Ouyang;Bo Liu
中科院分区：
文献类型：
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作者：
Jiawen Chen;Huili Tang;Zhiwei Li;Zhichao Zhu;M. Gu;Jun-long Xu;X. Ouyang;Bo Liu
β-Ga_2O_3半导体晶体具有较宽的禁带宽度和较高的抗辐射性能，在医学成像、辐射探测、核物理实验等领域具有广阔的应用前景。然而，开发灵敏度高、响应速度快、稳定性好的β-Ga2O3基X射线辐射探测器仍然是一个挑战。在这里，我们展示了一种高性能的X射线探测器，它是由两个垂直的Ti/Au电极和一个高电阻率的β-Ga_2O_3：Fe晶体组成的掺铁β-Ga_2O_3(β-Ga_2O_3：Fe)晶体。由于Fe离子和自由电子的补偿，β-Ga_2O_3：Fe晶体的电阻率超过1012Ωcm。该探测器具有响应时间短(S 0.2%)、灵敏度高(75.3uC Gyair-1 cm-2)和高信噪比(100%)的特点，在X射线辐射检测中具有很大的潜力。
β-Ga2O3 semiconductor crystal is of wide band gap and high radiation resistance, which shows great potential for applications such as medical imaging, radiation detections, and nuclear physical experiments. However, developing β-Ga2O3-based X-ray radiation detectors with high sensitivity, fast response speed, and excellent stability remains a challenge. Here we demonstrate a high-performance X-ray detector based on a Fe doped β-Ga2O3 (β-Ga2O3:Fe) crystal grown by the float-zone growth method, which consists of two vertical Ti/Au electrodes and a β-Ga2O3:Fe crystal with high resistivity. The resistivity of the β-Ga2O3:Fe crystal exceeds 1012 Ω cm owed to the compensation of the Fe ions and the free electrons. The detector shows short response time (0.2 s), high sensitivity (75.3 µC Gyair -1 cm-2), and high signal-to-noise ratio (100), indicating great potential for X-ray radiation detection.