Photoelectrochemical anodization for the preparation of a thick tungsten oxide film
Photoelectrochemical anodization for the preparation of a thick tungsten oxide film
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DOI：
10.1016/j.elecom.2012.01.006
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发表时间：
2012-04
影响因子：
5.4
通讯作者：
Sun-Mi Kim;Jinsub Choi
中科院分区：
文献类型：
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作者：
Sun-Mi Kim;Jinsub Choi
采用光电氧化法制备了厚度约2.6μm的纳米多孔wo3；这种厚度大约是正常（无光）阳极膜厚度的两倍。厚度的增加是由于在表面上形成了保护性的氧化结晶，以及在照明过程中产生的孔加速了尖端的溶解。在AM 1.5光照下，电化学阳极氧化法制备的纳米多孔wo3薄膜在0.33M h3po4中显示出1.85mA/cm2的光电流，比普通阳极氧化法制备的薄膜高出近4倍。
Nanoporous WO3with a thickness of about 2.6μm was achieved by photoelectrochemical anodization; this thickness was around twice the thickness possible with normal (photo-absent) anodic film. The thickness increase is ascribed to the much formation of a protective crystalline oxide on the surface and acceleration of dissolution at the tip by holes generated during illumination. The nanoporous WO3film prepared by photoelectrochemical anodization shows photocurrents of 1.85mA/cm2in 0.33M H3PO4under AM 1.5 illumination, a value nearly four times higher than that for film prepared with normal anodization.