Silicon 45° micromirrors fabricated by etching in alkaline solutions with organic additives
Silicon 45° micromirrors fabricated by etching in alkaline solutions with organic additives
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DOI：
10.1007/s00542-013-1859-z
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发表时间：
2014-02-01
影响因子：
2.1
通讯作者：
Zubel, Irena
中科院分区：
文献类型：
--
作者：
Rola, Krzysztof P.;Ptasinski, Konrad;Zubel, Irena
本文研究了在氢氧化钾（KOH）和四甲基氢氧化铵（TMAH）溶液中，用硅各向异性腐蚀法制备45 A度微镜的工艺。反射平面由朝向Si（100）晶片倾斜45度的{110}侧壁平面形成。异丙醇和Triton X-100表面活性剂被用作添加剂，因为它们被认为提供大于1的蚀刻速率比R（100）/R（110），这是{110}侧壁显影所必需的。对所制备的45 A度空间微结构的{110}面粗糙度和{110}面轮廓质量进行了测试。用乙醇饱和的KOH溶液给出条纹状的{110}表面，尽管在KOH和TMAH蚀刻剂中加入Triton表面活性剂后条纹几乎消失。在KOH和含添加剂的TMAH溶液中获得了完全由{110}面限定的45 A度侧壁轮廓。微镜反射率的测量结果表明，在KOH溶液中用Triton表面活性剂代替乙醇，减少了反射引起的光功率损失。所获得的反射率与通过在具有表面活性剂的TMAH溶液中蚀刻所获得的反射率相当。
The fabrication of 45A degrees micromirrors by silicon anisotropic etching in potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) solutions containing organic additives is investigated in this paper. The reflective planes are formed by {110} sidewall planes inclined at 45A degrees towards the Si (100) wafer. Isopropyl alcohol and Triton X-100 surfactant are used as additives, because they are supposed to provide the etch rate ratio R(100)/R(110) > 1, which is necessary for {110} sidewalls development. The fabricated spatial microstructures with 45A degrees sidewalls are examined in terms of the {110} surface roughness and the quality of the {110} sidewall profile. The KOH solution saturated with the alcohol gives the striped {110} surface, though the stripes almost disappear after addition of Triton surfactant to KOH and TMAH etchants. The 45A degrees sidewall profiles fully defined by {110} planes are obtained in KOH as well as TMAH solutions containing additives. The measurements of micromirrors' reflectivity indicate that replacement of the alcohol by Triton surfactant in the KOH solution reduces the optical power loss caused by the reflection. The achieved reflectivity is comparable with the one obtained by etching in the TMAH solution with surfactant.