Growth of polycrystalline Heusler alloys for spintronic devices
Growth of polycrystalline Heusler alloys for spintronic devices
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DOI：
10.1088/0022-3727/47/26/265002
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
J. Sagar;C. Yu;L. Lari;A. Hirohata
中科院分区：
文献类型：
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作者：
J. Sagar;C. Yu;L. Lari;A. Hirohata
我们已经制备了多晶Co2 FeSi薄膜上的一些种子层，以优化其结构和磁性能。使用Cr/Ag组合种子层，已经制备出具有极低界面粗糙度（<1 nm）和在12-27 Oe范围内的可控折射率的膜。使用NiCr种子层和IrMn作为反铁磁层的小交换偏置为1030 Oe已实现。然而，在IrMn/Co2 FeSi界面处使用0.5nm的Mn层在退火之后将交换偏置（Hex）增加到375 Oe。这种结构将适用于自旋电子器件中的钉扎层。
We have prepared polycrystalline Co2FeSi thin films on a number of seed layers to optimize their structural and magnetic properties. Using a Cr/Ag combined seed layer, films have been produced with extremely low interfacial roughness (<1 nm) and controllable coercivities in the range 12–27 Oe. Such a structure would be suitable for the free layer in a spintronic device. Using a NiCr seed layer and IrMn as an antiferromagnetic layer a small exchange bias of ∼30 Oe has been achieved. However the use of a 0.5 nm Mn layer at the IrMn/Co2FeSi interface increases the exchange bias (Hex) to 375 Oe after annealing. This structure would be suitable for the pinned layer in a spintronic device.