Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates
Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates
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DOI：
10.1021/nl5000906
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发表时间：
2014-05-01
期刊：
影响因子：
10.8
通讯作者：
Xiong, Qihua
中科院分区：
文献类型：
--
作者：
Lu, Xin;Utama, M. Iqbal Bakti;Xiong, Qihua
在气相传递化学气相沉积（CVD）系统中，通过MoO3的硒化，成功地合成了大面积原子薄MoSe2薄膜。均匀薄膜面积可达1 × 1 cm(2)，主要由单层和双层MoSe2薄膜组成。扫描透射电子显微镜（STEM）图像揭示了薄膜的高度结晶性和单层晶界的原子结构。拉曼光谱和光致发光光谱证实了生长的MoSe2在光学上的高质量，电子输运测量强调了样品在纳米电子学上的潜在应用。
We present successful synthesis of large area atomically thin MoSe2 films by selenization of MoO3 in a vapor transport chemical vapor deposition (CVD) system. The homogeneous thin film can reach an area of 1 x 1 cm(2) consisting primarily of monolayer and bilayer MoSe2 film. Scanning transmission electron microscopy (STEM) images reveal the highly crystalline nature of the thin film and the atomic structure of grain boundaries in monolayers. Raman and photoluminescence spectroscopy confirm the high quality of as-grown MoSe2 in optics, and electronic transport measurements highlight the potential applications of the sample in nanoelectronics.