Hall Coefficient for CeRu2Al10under Pressure
Hall Coefficient for CeRu2Al10under Pressure
复制标题
CeRu2Al10 在压力下的霍尔系数
DOI：
10.1143/jpsjs.80sa.sa046
复制
发表时间：
2011
影响因子：
1.7
通讯作者：
Y. Uwatoko
中科院分区：
文献类型：
--
作者：
Y. Kawamura;Yuta Ogane;T. Nishioka;H. Kato;M. Matsumura;Daiki Tanaka;H. Tanida;M. Sera;A. Kondo;K. Matsubayashi;Y. Uwatoko
研究了CeRu 2Al 10单晶在压力作用下的霍尔效应，研究了其在15 K以下电阻率出现的半导化行为。此外，还研究了常压下等结构CeFe 2Al 10单晶的霍尔效应. CeFe 2Al 10的霍耳系数RH（T）从室温开始随温度的降低而增大，但在90 K以下则减小.在45 K时，RH（T）的符号由正变为负.常压下CeRu 2Al 10的RH（T）在所有温度下都为正值，并随温度的降低而增大.它在T0时表现出一个扭结，并且在扭结之后大幅增加。在0 ~ 2.1GPa压力范围内测量了CeRu 2Al 10的RH（T）.当温度低于15 K时，随着压力的增加，RH（T）的幅度逐渐减小.我们假定CeT 2Al 10是补偿金属，因为该化合物有四个分子. CeFe 2Al 10的RH（T）结果表明，CeFe 2Al 10的载流子迁移率主要是由载流子的迁移率决定的.
The Hall effect on single crystal of CeRu 2 Al 10 under pressure has been studied to investigate semiconducting behavior which appears in electrical resistivity below 15 K. In addition, the Hall effect on single crystal of isostructual CeFe 2 Al 10 at ambient pressure has been studied. The Hall coefficient R H ( T ) of CeFe 2 Al 10 increases with decreasing temperature from room temperature, whereas it decreases below 90 K. The sign of R H ( T ) is changed from positive to negative at 45 K. R H ( T ) of CeRu 2 Al 10 at ambient pressure is positive at all temperatures and increases with decreasing temperature. It shows a kink at T 0 and increases largely after the kink. The pressure effect on R H ( T ) of CeRu 2 Al 10 was measured from 0 to 2.1 GPa. The magnitude of R H ( T ) below 15 K is gradually suppressed by applying pressure. We assumed Ce T 2 Al 10 to be compensate metal, because this compound has four molecules. The results of R H ( T ) of CeFe 2 Al 10 indicate that the dominant mobility of carrier...