p-type conductivity in CuCr1-xMgxO2 films and powders
p-type conductivity in CuCr1-xMgxO2 films and powders
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DOI：
10.1063/1.1372636
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发表时间：
2001-06-15
影响因子：
3.2
通讯作者：
Tate, J
中科院分区：
文献类型：
--
作者：
Nagarajan, R;Draeseke, AD;Tate, J
CuCr1-xMgxO2是一种具有延迟岩结构的宽带隙半导体，以块状和薄膜形式合成。大量未掺杂的CuCrO2几乎是黑色的，在p型载流子中具有中等导电性。在掺杂5% Mg后，电导率增加了1000倍。在CuCr0.95Mg0.05O2中，薄膜中p型电导率最高为220 S cm(-1)，比之前报道的cu基p型沉积高7倍。未掺杂薄膜的电导率为1 S cm（-1）阶。薄膜通常是多晶在非晶基底上，但未掺杂的薄膜可以是c轴取向的，如果沉积在或高于650度。光学和紫外传输数据表明直接带隙为3.1 eV。(C) 2001年美国物理研究所。
CuCr1-xMgxO2, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm(-1) in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm(-1). Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 degreesC. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV. (C) 2001 American Institute of Physics.