PREVAIL-Electron projection technology approach for next-generation lithography
PREVAIL-Electron projection technology approach for next-generation lithography
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DOI：
10.1147/rd.455.0615
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发表时间：
2001-09
期刊：
影响因子：
--
通讯作者：
R. Dhaliwal;W. A. Enichen;S. Golladay;M. Gordon;R. Kendall;J. E. Lieberman;H. C. Pfeiffer;David J. Pinckney;C. Robinson;James D. Rockrohr;W. Stickel;E. V. Tressler
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文献类型：
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作者：
R. Dhaliwal;W. A. Enichen;S. Golladay;M. Gordon;R. Kendall;J. E. Lieberman;H. C. Pfeiffer;David J. Pinckney;C. Robinson;James D. Rockrohr;W. Stickel;E. V. Tressler
本文概述了IBM微电子事业部将电子束光刻技术扩展到投影级以用于下一代光刻的工作。正在探索的方法--用可变轴浸没透镜减少投影曝光(盛行)--将大规模平行像素投影的高曝光效率与扫描探头形成系统相结合，以动态校正像差。与光学光刻系统相比，电子束光刻系统不受衍射限制，其最终可达到的分辨率在实际目的上是无限的。然而，它们的生产能力一直是--并将继续是--电子束光刻的主要挑战。为应对这一挑战，已经开展了这里所述、目前仍在继续的工作。已经使用了新颖的电子光学方法，并且通过概念验证(POC)系统确定了它们的可行性，POC系统包括用于以100 nm的分辨率实现大距离(在掩模版上为20 mm)光束扫描的曲线可变轴透镜(CVAL)和用于实现掩模版的1-mm2部分的均匀照明的高发射度电子源。目前正在与尼康公司共同开发用于100纳米节点的生产级盛行系统原型--“阿尔法”系统。在撰写本文时，它的电子光学子系统已达到基本运行状态，并正在准备与尼康工厂正在开发的机械和真空子系统集成。
This paper is an overview of work in the IBM Microelectronics Division to extend electron-beam lithography technology to the projection level for use in next-generation lithography. The approach being explored--Projection Reduction Exposure with Variable Axis Immersion Lenses (PREVAIL)--combines the high exposure efficiency of massively parallel pixel projection with scanning-probe-forming systems to dynamically correct for aberrations. In contrast to optical lithography systems, electron-beam lithography systems are not diffraction-limited, and their ultimate attainable resolution is, for practical purposes, unlimited. However, their throughput has been--and continues to be--the major challenge in electron-beam lithography. The work described here, currently continuing, has been undertaken to address that challenge. Novel electron optical methods have been used and their feasibility ascertained by means of a Proof-Of-Concept (POC) system containing a Curvilinear Variable Axis Lens (CVAL) for achieving large-distance (>20 mm at a reticle) beam scanning at a resolution of <100 nm, and a high-emittance electron source for achieving uniform illumination of a 1-mm2 section of the reticle. A production-level prototype PREVAIL system, an "alpha" system, for the 100-nm node has been under development jointly with the Nikon Corporation. At the writing of this paper, its electron-optics subsystem had been brought up to basic operation and was being prepared for integration with its mechanical and vacuum subsystem, under development at Nikon facilities.