Application of hardness-by-design methodology to radiation-tolerant ASIC technologies
Application of hardness-by-design methodology to radiation-tolerant ASIC technologies
复制标题
将硬度设计方法应用于耐辐射 ASIC 技术
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
D. C. Mayer
中科院分区：
文献类型：
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作者：
R. Lacoe;J. V. Osborn;R. Koga;S. Brown;D. C. Mayer
抗辐射ASIC设计是由商业微电子朝着增加辐射硬度的趋势所实现的，这里展示了利用浅沟槽隔离的0.25-/spl mu/m商业工艺的新辐射结果。针对传统的抗辐射代工厂（可能落后于商业代工厂两代以上）创建ASIC，在商业代工厂应用设计硬度方法，以及使用商业设计实践直接针对商业代工厂之间进行设计比较。
Radiation-hard ASIC design is enabled by the trend in commercial microelectronics toward increased radiation hardness, demonstrated here with new radiation results on a 0.25-/spl mu/m commercial process utilizing shallow trench isolation. A design comparison is made between creating ASICs targeting a traditional rad-hard foundry, which may be more than two generations behind commercial foundries, applying hardness-by-design methodology at a commercial foundry, and directly targeting a commercial foundry using commercial design practices.