Concentration induced damping of gas sensitivity in ultrathin tellurium films
Concentration induced damping of gas sensitivity in ultrathin tellurium films
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DOI：
10.1016/j.snb.2012.12.022
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发表时间：
2013-02
影响因子：
8.4
通讯作者：
D. Tsiulyanu;O. Mocreac
中科院分区：
文献类型：
--
作者：
D. Tsiulyanu;O. Mocreac
首次观察到高NO2气体浓度对碲薄膜灵敏度的影响。AFM、SEM和XRD分析显示，在小于40nm的超薄层中，该现象明显为非晶态。在150 ~ 500ppb二氧化氮浓度范围内，随着二氧化氮浓度的增加，膜的灵敏度呈近似线性下降。结果被解释为二氧化氮催化门的形成，其中分子吸附（和解吸）而不反应。
The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be in amorphous state. Sensitivity of 30nm thickness Te film decreases near linearly with concentration increase between 150 and 500ppb of nitrogen dioxide. Results are explained in terms of formation of a nitrogen dioxide catalytic gate in which a molecule adsorbs (and desorbs) without reacting.