Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
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DOI：
10.1143/jjap.46.1
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发表时间：
2007-01
影响因子：
1.5
通讯作者：
C. Banerjee;K. L. Narayanan;K. Haga;J. Sritharathikhun;S. Miyajima;A. Yamada;M. Konagai
中科院分区：
文献类型：
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作者：
C. Banerjee;K. L. Narayanan;K. Haga;J. Sritharathikhun;S. Miyajima;A. Yamada;M. Konagai
采用热丝化学气相沉积（HWCVD）技术，在低衬底温度（~ 300℃）下制备了n型微晶立方碳化硅（µC - 3c - sic:H）薄膜。采用在厚度为200µm、电阻率为1 ~ 10 Ω cm的p型硅片上沉积宽带隙n型µc-3C-SiC薄膜的方法制备了异质结硅基光伏器件。在器件制造之前，用碱性蚀刻剂对硅片进行了纹理处理。典型器件的光伏参数为：Voc= 560mv, Jsc=35.0 mA/cm2，填充系数（F.F.）。= 0.724, η=14.20%。采用一维器件模拟器AFORS-HET （automat for simulation of hetero structures）进行数值分析，以确定器件参数在灯丝老化前后变化的可能原因。
The n-type microcrystalline cubic silicon carbide (µc-3C–SiC:H) films were deposited by hot wire chemical vapor deposition (HWCVD) at a low substrate temperature (∼300 °C). Heterojunction silicon based photovoltaic devices were fabricated by depositing wide band gap n-type µc-3C–SiC thin films on p-type Si wafers, whose thickness and resistivity were 200 µm and 1–10 Ω cm, respectively. The silicon wafers were textured using alkaline etchant prior to the device fabrication. The photovoltaic parameters of a typical device were found to be Voc=560 mV, Jsc=35.0 mA/cm2, fill factor (F.F.) = 0.724, and η=14.20%. Numerical analysis was performed using automat for simulation of hetero structures (AFORS-HET), a one-dimensional device simulators to determine the probable cause of the changes in device parameters before and after the ageing of the filament.