Digital electrostatic electron-beam array lithography
Digital electrostatic electron-beam array lithography
复制标题
数字静电电子束阵列光刻
DOI：
10.1116/1.1520559
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发表时间：
2002
影响因子：
1.4
通讯作者：
A. Melechko
中科院分区：
文献类型：
--
作者：
L. Baylor;D. Lowndes;M. Simpson;C. E. Thomas;M. Guillorn;V. Merkulov;J. H. Whealton;E. D. Ellis;D. Hensley;A. Melechko
橡树岭国家实验室提出了无掩模数字静电聚焦电子束阵列直写光刻（DEAL）的概念。该概念将数字可寻址场发射阵列（DAFEA）集成到逻辑和控制电路中，该逻辑和控制电路被实现为集成电路。设计目标是在单个1 cm 2集成电路上实现3000000个间距为4 μm x 8 μm的可单独寻址场发射阴极。 DAFEA设计包括每个发射器的内置静电聚焦，反馈剂量控制电路驱动每个发射器，以严格控制电子传输。通过静电聚焦，将1/460个集成电路阵列（最多30个宽x 1/23行深）悬挂在300 mm半导体晶片上方1/100 μm的背板上。这种安排可以光刻曝光整个300毫米晶圆，30纳米像素，在不到45秒，与每个晶圆像素冗余照明八次，允许灰度边缘p...
A concept for maskless digital electrostatically focused e-beam array direct-write lithography (DEAL) has been developed at Oak Ridge National Laboratory. This concept incorporates a digitally addressable field-emission array (DAFEA) integrated into a logic and control circuit implemented as an integrated circuit. The design goal is for 3 000 000 individually addressable field-emission cathodes with a 4 μm by 8 μm pitch on a single ∼1 cm2 integrated circuit. The DAFEA design includes built-in electrostatic focusing for each emitter with feedback dose-control circuits to drive each emitter for tightly controlled electron delivery. With the electrostatic focusing, an array of ∼460 of these integrated circuits (up to 30 across by ∼23 rows deep) are suspended on a back plane ∼100 μm above a 300 mm semiconductor wafer. This arrangement could lithographically expose an entire 300 mm wafer, with 30 nm pixels, in less than 45 s, with every wafer pixel redundantly illuminated eight times allowing gray-scale edge p...