Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide
Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide
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非对称波导单片集成两段InGaAs/GaAs双量子阱激光器的锁模工作特性
DOI：
10.1016/j.optlastec.2021.107702
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发表时间：
2022
影响因子：
5
通讯作者：
Chongyang Liu
中科院分区：
文献类型：
--
作者：
Zhongliang Qiao;Xiang Li;Jia XuBrian Sia;WanJun Wang;Hong Wang;Lin Li;Zaijin Li;Zhibin Zhao;Guojun Liu;Hao Chen;Yi Qu;Xin Gao;Baoxue Bo;Chongyang Liu
本文报道了基于非对称波导的InGaAs/GaAs双量子阱（DQW）被动锁模激光器（mls）的亚皮秒脉冲产生。系统地测量了两段MLL的性能，发现增益区电流、吸收器反向偏置电压和工作温度对MLL的锁模频率、线宽、脉宽、发射波长和信号强度都有明显的调制作用。特别是，在所制备的器件发射波长为1065.4µm，在12.155 GHz的重复频率下，脉冲宽度为~ 396 fs，在20°C的理想时间带宽积（TBWP）下，峰值功率为~ 1.25 W。据我们所知，这是DQW mls报告的最佳价值。得到了温度升高引起的脉宽增加应在6.5-11.4 fs/°C范围内，并发现反向偏置段的热量积累或热效应对MLL有关键影响。这对我们提高MLL的性能具有重要意义。
We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on asymmetric waveguide with InGaAs/GaAs double quantum wells (DQW) passively mode-locked lasers (MLLs) grown in one epitaxial step. With systematic measurement of the performances of two-section MLLs, we found that the gain region current, absorber reverse bias voltage and operating temperature all have obvious modulation effects on the mode-locked frequency, line width, pulse width, emitting wavelength, and signal intensity of the MLL. Especially, the prepared device emitting at 1065.4 µm exhibited ∼396 fs of a pulse width at 12.155 GHz repetition rate, peak power of ∼1.25 W under an ideal time bandwidth product (TBWP) at 20 °C. To our knowledge, it is the best value ever reported for DQW MLLs. And we obtained that the pulse width increase caused by the temperature rise should be in the range of 6.5–11.4 fs/°C, also found that the heat accumulation or thermal effect in the reverse bias section has a key influence on MLL. This is of great significance for us to improve the performance of MLL.