Nanoscale electron-beam-stimulated processing
Nanoscale electron-beam-stimulated processing
复制标题
DOI：
10.1063/1.1565696
复制
发表时间：
2003-04-07
影响因子：
4
通讯作者：
Joy, DC
中科院分区：
文献类型：
--
作者：
Rack, PD;Randolph, S;Joy, DC
电子束激励沉积和蚀刻已被研究作为一种清洁的，替代的方法，用于纳米级选择性加工。使用W（CO）（6）和烃源的沉积已经产生了有效的和选择性的电子束沉积。基于氟的前体已用于蚀刻多种材料。关于硅和二氧化硅的选择性蚀刻的初步结果表明，与气体的初级电子束的非弹性散射发生，并且在较低的束能量是更严重的。蚀刻速率随着电子束能量的降低而线性增加，然而，尚不清楚这是由于增强的一次电子激发过程还是二次电子激发过程。小至55 nm的特征尺寸已被选择性地处理。(C)2003年，美国物理学会。
Electron-beam-stimulated deposition and etching has been investigated as a clean, alternative method for nanoscale selective processing. Depositions using W(CO)(6) and hydrocarbon sources have yielded efficient and selective electron-beam deposits. Primarily fluorine-based precursors have been used to etch a variety of materials. Initial results regarding the selective etching of silicon and silicon dioxide suggest that inelastic scattering of the primary electron beam with the gas occurs and is more severe at lower beam energies. The etch rate increases linearly with decreasing electron-beam energy, however, it is not clear if this is due to enhanced primary- or secondary-electron-stimulated processes. Feature sizes as small as 55 nm have been selectively processed. (C) 2003 American Institute of Physics.