Fabrication of Thin-GaN LED Structures by Au–Si Wafer Bonding
Fabrication of Thin-GaN LED Structures by Au–Si Wafer Bonding
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DOI：
10.1149/1.2181293
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发表时间：
2006-05
影响因子：
--
通讯作者：
S. Hsu;C. Y. Liu
中科院分区：
文献类型：
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作者：
S. Hsu;C. Y. Liu
采用金硅键合和激光剥离技术，成功地将发光二极管（LED）GaN外延层转移到Si衬底上。在晶片键合之后，使用KrF准分子激光器将GaN层与生长的蓝宝石衬底分离。拉曼光谱结果表明，转移后GaN外延层的质量没有发生变化，转移后GaN外延层的初始压应力水平降低了202 MPa。转移的GaN外延层被进一步处理以用于薄GaN LED器件。亮度-强度-电流-电压曲线结果表明正向电压为3.4V，在20 mA时亮度强度为204 mcd。
Using Au-Si wafer bonding and laser lift-off (LLO) techniques, an light emitting diode (LED) GaN epi layer was successfully transferred onto a Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The Raman spectra results show that the quality of the transferred GaN epi layer did not change; the initial compressive stress level of the GaN epi layer was relieved by 202 MPa after transferring. The transferred GaN epi layer was further processed for use in a thin-GaN LED device. The luminance-intensity-current voltage curve results indicate a forward voltage of 3.4 V, and a luminance intensity of 204 mcd at 20 mA.