Materials and techniques used in nanostructure fabrication
Materials and techniques used in nanostructure fabrication
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纳米结构制造中使用的材料和技术
DOI：
10.1116/1.569924
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发表时间：
1979
期刊：
影响因子：
--
通讯作者：
R. Laibowitz
中科院分区：
文献类型：
--
作者：
W. Molzen;A. Broers;J. Cuomo;J. Harper;R. Laibowitz
高分辨率电子束已被用于使用“污染”抗蚀剂生成8 nm宽和10 nm高的金属结构，以及使用PMMA抗蚀剂生成在50 nm中心上具有25 nm线宽的密集金属图案。这些抗蚀剂材料与标准沉积技术和离子束铣削一起已被用于制备尺寸为纳米量级的各种结构。目前的金属结构尺寸受到衬底中的电子背散射事件、金属薄膜的微观结构以及抗污染工艺本身的未知因素的限制。讨论了加工技术以及对电子束几乎透明的衬底的制备。
A high‐resolution electron beam has been used to generate metal structures 8 nm wide and 10 nm high using ’’contamination’’ resist and dense metal patterns with 25 nm linewidths on 50‐nm centers using PMMA resist. These resist materials together with standard deposition techniques and ion beam milling have been used to prepare a variety of structures on the order of nanometers in dimension. Present metal structure dimensions are limited by electron backscattering events in the substrate, the microstructure of the metallic thin film, and unknowns in the contamination resist process itself. The processing techniques are discussed as well as the preparation of substrates which are almost transparent to the electron beam.