Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts
Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts
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DOI：
10.1021/nl902186v
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发表时间：
2009-11-01
期刊：
影响因子：
10.8
通讯作者：
Alivisatos, A. Paul
中科院分区：
文献类型：
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作者：
Sheldon, Matthew T.;Trudeau, Paul-Emile;Alivisatos, A. Paul
我们报告了一个100000倍的个别CdSe纳米棒的电导增加时，他们通过直接溶液相生长的Au尖端的纳米棒端部电接触。紫外可见光谱和X射线光电子能谱表明，这种增强不是由于纳米棒的合金化。相反，低温隧穿和高温（250-400 K）跨结在Au接触电子发射揭示了一个低75%的界面势垒传导相比，控制样品。我们将这种势垒降低与Au-CdSe界面处的电子结构相关联。我们的研究结果强调的重要性，一个强大的器件性能和这种接触方法的优势，表面结构。
We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies Indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the Importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.