AlGaN/GaN epitaxy and technology
AlGaN/GaN epitaxy and technology
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AlGaN/GaN外延及技术
DOI：
10.1017/s175907871000005x
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发表时间：
2010
影响因子：
1.4
通讯作者：
O. Ambacher
中科院分区：
文献类型：
--
作者：
P. Waltereit;W. Bronner;R. Quay;M. Dammann;R. Kiefer;W. Pletschen;S. Müller;R. Aidam;H. Menner;L. Kirste;K. Köhler;M. Mikulla;O. Ambacher
我们概述了我们在3- in和4-in上制造的GaN高电子迁移率晶体管（hemt）的外延生长，加工技术，器件性能和可靠性。碳化硅基板。外延和加工在性能和可靠性方面都进行了优化。我们使用三种不同的栅极长度，即用于1-6 GHz应用的500 nm，用于6至18 GHz设备的250 nm，以及用于更高频率的150 nm。开发的hemt在所有栅极长度下都具有出色的高压稳定性、高功率性能和大的DC到RF转换效率。在用于基站应用的大栅极宽度器件上，可以实现超过125 W的输出功率，功率增加效率约为60%，线性增益约为16 dB。可靠性测试在直流和射频条件下，电源电压分别为50和30 V，用于500和250 nm栅极。在IDQ条件下，HEMT器件的直流测试返回的漏极电流变化仅为10%左右。在射频应力下，两种栅极长度技术在超过1000小时后观察到的输出功率密度变化小于0.2 dB。
We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1–6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 150 nm for higher frequencies. The developed HEMTs demonstrate excellent high-voltage stability, high power performance, and large DC to RF conversion efficiencies for all gate lengths. On large gate width devices for base station applications, an output power beyond 125 W is achieved with a power added efficiency around 60% and a linear gain around 16 dB. Reliability is tested both under DC and RF conditions with supply voltage of 50 and 30 V for 500 and 250 nm gates, respectively. DC tests on HEMT devices return a drain current change of just about 10% under IDQ conditions. Under RF stress the observed change in output power density is below 0.2 dB after more than 1000 h for both gate length technologies.