Influence of reactive surface groups on the deposition of oxides thin film by atomic layer deposition
Influence of reactive surface groups on the deposition of oxides thin film by atomic layer deposition
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活性表面基团对原子层沉积氧化物薄膜的影响
DOI：
10.1016/j.surfcoat.2017.09.047
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发表时间：
2017-11-25
影响因子：
5.4
通讯作者：
Shi, Jianjun
中科院分区：
文献类型：
--
作者：
Edy, Riyanto;Huang, Gaoshan;Shi, Jianjun
采用原子层沉积法在聚对苯二甲酸乙二醇酯（PET）基体上成功地沉积了Al2O3和TiO2薄膜。实验结果表明，Al（2）O（3）3在PET基片上的沉积效率高于TiO 2。进一步表征表明，羟基OH基团的密度对氧化物ALD膜的生长起着重要的作用。通过X射线光电子能谱表征涂覆的基底的化学组成，其显示C=0元素被Al2O3涂覆的PET中的Al相关元素和TiO2涂覆的PET中的Ti相关元素替代。结果表明，C=0对氧化物薄膜的初始ALD生长具有强烈的贡献。
In this study, polyethylene terephthalate (PET) substrate was successfully coated Al2O3 and TiO2 films by atomic layer deposition (ALD). The experiment results demonstrate that the Al(2)O(3)3 can be deposited more efficiently than TiO2 on PET substrates. Further characterization on the coated substrates reveals that the density of hydroxyl OH groups play a significant role on the growth of the oxides ALD film. Chemical composition of the coated substrates is characterized by X-ray photoelectron spectroscopy, which shows that the C=0 elements are replaced by the Al - related elements in the Al2O3 - coated PET and the Ti - related elements in the TiO2 - coated PET. The results demonstrate that the C=0 has a strongly contribution to facilitate the initial ALD growth of the oxides thin films.