Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction
Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction
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DOI：
10.1103/physrevb.102.224432
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发表时间：
2020-04
影响因子：
3.7
通讯作者：
R. Tomasello;L. Sánchez-Tejerina;V. Lopez-Dominguez;F. Garescì;A. Giordano;M. Carpentieri;P. Amiri;G. Finocchio
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文献类型：
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作者：
R. Tomasello;L. Sánchez-Tejerina;V. Lopez-Dominguez;F. Garescì;A. Giordano;M. Carpentieri;P. Amiri;G. Finocchio
反铁磁自旋电子学是发展高性能计算和通信器件的一个很有前途的新兴范例。从理论的角度来看，重要的是要实现模拟工具，可以支持数据驱动的开发具有特定应用的特定属性的材料。在这里，我们提出了一个研究的重点是反铁磁材料具有易平面各向异性和界面Dzyaloshinskiii-Moriya相互作用（IDMI）。一个分析理论的开发和基准对全数值微磁模拟，描述反铁磁体的基态的主要特性，以及如何有可能估计的IDMI从实验测量。还分析了IDMI对反铁磁元件的电开关动力学的影响。我们的理论结果可用于多终端重金属/反铁磁存储器件的设计。
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.