Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes
Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes
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DOI：
10.1063/1.4736565
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发表时间：
2012-07
影响因子：
4
通讯作者：
Pyry Kivisaari;L. Riuttanen;J. Oksanen;S. Suihkonen;M. Ali;H. Lipsanen;J. Tulkki
中科院分区：
文献类型：
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作者：
Pyry Kivisaari;L. Riuttanen;J. Oksanen;S. Suihkonen;M. Ali;H. Lipsanen;J. Tulkki
我们提出了一种直接的电学测量方法，用于确定三族氮化物发光二极管（LED）的提取效率（EXE）和内量子效率（IQE）。该方法是基于测量的光输出功率的注入电流在电流密度附近的外量子效率（EQE）的最大值和提取IQE和EXE从测量数据的函数。与传统方法相比，我们的方法不需要低温测量或器件结构的先验知识。该方法比常用的方法方便得多，因为它可以在室温下以可重复和一致的方式直接测量不同LED结构的EXE和IQE。这使得能够方便地比较LED结构。应用该方法对一种商用LED的IQE和EXE进行了测试，并选取了自生长的平面LED芯片，比较了不同LED结构设计的效果。我们的结果与已发表的实验结果一致，并...
We propose a direct electrical measurement method for determining the extraction efficiency (EXE) and internal quantum efficiency (IQE) of III-Nitride light-emitting diodes (LEDs). The method is based on measuring the optical output power as a function of injection current at current densities near the external quantum efficiency (EQE) maximum and extracting IQE and EXE from the measurement data. In contrast to conventional methods, our method requires no low temperature measurements or prior knowledge of the device structure. The method is far more convenient than commonly used methods because it enables measuring the EXE and IQE of different LED structures at room temperature directly in a repeatable and consistent way. This enables convenient comparison of LED structures. We apply the method to determine the IQE and EXE of one commercial LED and selected self-grown planar LED chips to compare the effects of different LED structure designs. Our results are in line with published experimental results and...