Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes
Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes
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DOI：
10.1063/1.2913163
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发表时间：
2008-04-28
影响因子：
4
通讯作者：
Miyazaki, Terunobu
中科院分区：
文献类型：
--
作者：
Kim, Gukcheon;Sakuraba, Yuya;Miyazaki, Terunobu
利用具有垂直磁各向异性的L1（0）有序CoPt电极制备了磁性隧道结（MTJ）。采用溅射法在单晶MgO-（001）衬底上制备了CoPt/MgO/CoPt-MTJ全外延薄膜。X射线衍射分析表明，底部和顶部的CoPt电极的外延生长与（001）取向。对于在600摄氏度的衬底温度下沉积的底部CoPt电极，获得0.82的L1（0）-化学有序参数。在垂直于薄膜平面的磁场作用下的输运测量表明，室温下的隧道磁电阻率为6%，10 K时为13%。(C)2008年美国物理学会。
Magnetic tunnel junctions (MTJs) using L1(0)-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L1(0)-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 degrees C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K. (C) 2008 American Institute of Physics.