Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate
Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate
复制标题
自热效应对硅衬底纳米级 Ge p 沟道 FinFET 的影响
DOI：
10.1007/s11432-016-9106-x
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Liu Xiaoyan
中科院分区：
文献类型：
--
作者：
Yin Longxiang;Shen Lei;Jiang Hai;Du Gang;Liu Xiaoyan
本文采用TCAD模拟方法研究了Si衬底纳米Ge p沟FinFET的自热效应。模拟中使用了具有修正迁移率的流体动力学输运和具有修正热导率的傅立叶导热定律。研究了不同源漏延伸长度和鳍高的Ge p沟道单鳍FinFET器件以及不同鳍数和鳍间距的多鳍FinFET器件。源极、漏极和栅极接触处的边界热阻被设置为2000 μ m2 K/W，并且衬底热边界条件被设置为300 K，使得源极和漏极散热路径是前两个散热路径。结果如下所示：（i）具有47 nm鳍间距的14 nm Ge p沟道单鳍FinFET经历9.7%的通态电流退化。(ii)在相同的输入功率下，源/漏扩展长度越长的FinFET，其晶格温度越高，通态电流退化越大。(iii)在相同的输入功率下，鳍片高度越高的FinFET表现出越高的晶格温度。(iv)多鳍FinFET器件中的温度将首先增加，然后随着鳍数目的增加而饱和。最后，对Ge p沟道单鳍FinFET和多鳍FinFET的热阻进行了研究。
In this paper, self-heating effects (SHE) in nanoscale Ge p-channel FinFETs with Si substrate are evaluated by TCAD simulation. Hydrodynamic transport with modified mobilities and Fourier´s law of heat conduction with modified thermal conductivities are used in the simulation. Ge p-channel single-fin FinFET devices with different S/D extension lengths and fin heights, and multi-fin FinFETs with different fin numbers and fin pitches are successively investigated. Boundary thermal resistances at source, drain and gate contacts are set to 2000 μm2K/W and the substrate thermal boundary condition is set to 300 K so that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below: (i) 14 nm Ge p-channel single-fin FinFETs with a 47 nm fin pitch experience 9.7% on-state current degradation. (ii) Considering the same input power, FinFETs with a longer S/D extension length show a higher lattice temperature and a larger on-state current degradation. (iii) Considering the same input power, FinFETs with a taller fin height show a higher lattice temperature. (iv) The temperature in multi-fin FinFET devices will first increase then saturate with the increasing fin number. At last, thermal resistances in Ge p-channel single-fin FinFETs and multi-fin FinFETs are investigated.