Light‐emitting devices based on the real‐space transfer of hot electrons
Light‐emitting devices based on the real‐space transfer of hot electrons
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DOI：
10.1063/1.105122
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发表时间：
1991-04
影响因子：
4
通讯作者：
S. Luryi
中科院分区：
文献类型：
--
作者：
S. Luryi
The real‐space transfer of hot electrons into semiconductor layers, where the transferred electrons are minority carriers, results in a generation of light by recombination. Based on this principle, several optoelectronic devices of varying degree of complexity are proposed in the present work. In particular, we propose a new class of vertical‐cavity surface‐emitting lasers that can be implemented in a number of heterostructures, including long wavelength materials (over 1.5 μm). An advantage of these structures is that the injection can be arranged without any current passing through the dielectric mirror stacks forming an optical cavity. Real‐space transfer lasers can be used as logic devices with optical output functionally related to two or more electrical inputs.
