Electro‐optical effects of Cd1−xMnxTe films prepared by ionized‐cluster beams
Electro‐optical effects of Cd1−xMnxTe films prepared by ionized‐cluster beams
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DOI：
10.1063/1.342987
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发表时间：
1989-02
影响因子：
3.2
通讯作者：
Kimio Nakamura;T. Koyanagi;K. Yamano;K. Matsubara
中科院分区：
文献类型：
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作者：
Kimio Nakamura;T. Koyanagi;K. Yamano;K. Matsubara
我们报告的第一次调查的电光性质的Cd 1 −xMnxTe薄膜，制备的离子簇束沉积技术。在800 ~ 450 nm的波长范围内测量了薄膜的双折射率Δn。得到的主要结果如下：Δn的值随外加电场的增大而增大到2次方，对于x= 0. 77的薄膜，在633 nm处获得了3. 5 ×10−12 cm 2/V2的大二次电光系数。在其带隙附近观察到Δn的波长色散，这表明这些薄膜的电光特性是由Franz-Keldysh效应引起的。
We report the first investigation of electro‐optical properties of Cd1−xMnxTe films, prepared by the ionized‐cluster beam deposition technique. Measurements of the birefringence Δn of the films were performed under applied electric field in the wavelength region from 800 to 450 nm. Major results obtained are as follows: The value of Δn rises to second power against the applied electric field, and for a film with x=0.77 a large quadratic electro‐optical coefficient of 3.5×10−12 cm2/V2 is obtained at 633 nm. The wavelength dispersion of Δn is observed near its band gap, suggesting that the electro‐optical properties of these films are caused by the Franz–Keldysh effect.