Nanosphere Lithography for the Fabrication of Ultranarrow Graphene Nanoribbons and On- Chip Bandgap Tuning of Graphene
Nanosphere Lithography for the Fabrication of Ultranarrow Graphene Nanoribbons and On- Chip Bandgap Tuning of Graphene
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DOI：
10.1002/adma.201003847
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发表时间：
2011-03-01
影响因子：
29.4
通讯作者：
Wang, Enge
中科院分区：
文献类型：
--
作者：
Liu, Lei;Zhang, Yingli;Wang, Enge
提出了一种使用纳米球光刻 (NSL) 纳米图案结合低功率 O-2 等离子体蚀刻高通量、快速且低成本制造超窄石墨烯纳米带 (GNR) 的创新方法。 NSL 图案化本质上简单，使得这种制造方法适用于 GNR 的直接片上制造和石墨烯的带隙调整。
An innovative approach for the high-throughput, rapid, and low-cost fabrication of ultranarrow graphene nanoribbons (GNRs) using nanosphere lithography (NSL) nanopatterning in combination with low-power O-2 plasma etching is presented. The intrinsic simplicity of NSL patterning enables this fabrication approach to be applicable for the straightforward on-chip fabrication of GNRs and bandgap tuning of graphene.